document number: 81643 for technical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.2, 12-may-09 1 silicon pin photodiode TEMD5080X01 vishay semiconductors description TEMD5080X01 is a pin photodiode with enhanced blue sensitivity. the miniature surface mount package (smd) include a chip with 7.7 mm 2 sensitive area, covered by clear epoxy. features ? package type: surface mount ? package form: top view ? dimensions (l x w x h in mm): 5 x 4.24 x 1.12 ? radiant sensitive area (in mm 2 ): 7.7 ? aec-q101 qualified ? enhanced blue photo sensitivity: s (400 nm) rel > 30 % ? peak sensitivity at 940 nm ? suitable for visible and near infrared radiation ? low junction capacitance ? fast response times ? angle of half sensitivity: ? = 65 ? floor life: 72 h, msl 4, acc. j-std-020 ? lead (pb)-free reflow soldering ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? find out more about vishay?s automotive grade product requirements at: www.vishay.com/applications applications ? high speed photo detector note test conditions see table ?basic characteristics? note moq: minimum order quantity note t amb = 25 c, unless otherwise specified 20535 product summary component i ra (a) ? (deg) 0.1 (nm) TEMD5080X01 60 65 350 to 1100 ordering information ordering code packaging remarks package form TEMD5080X01 tape and reel moq: 1500 pcs, 1500 pcs/reel top view absolute maximum ratings parameter test condition symbol value unit reverse voltage v r 25 v power dissipation t amb 25 c p v 215 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 110 c soldering temperature acc. refl ow solder profile fig. 8 t sd 260 c thermal resistance junction/ambient r thja 350 k/w
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81643 2 rev. 1.2, 12-may-09 TEMD5080X01 vishay semiconductors silicon pin photodiode note t amb = 25 c, unless otherwise specified basic characteristics t amb = 25 c, unless otherwise specified fig. 1 - reverse dark current vs. ambient temperature fig. 2 - relative reverse light current vs. ambient temperature basic characteristics parameter test condition symbol min. typ. max. unit forward voltage i f = 50 ma v f 11.3v breakdown voltage i r = 100 a, e = 0 v (br) 25 v reverse dark current v r = 10 v, e = 0 i ro 210na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 90 pf v r = 3 v, f = 1 mhz, e = 0 c d 30 40 pf open circuit voltage e e = 1 mw/cm 2 , = 950 nm v o 350 mv temperature coefficient of v o e e = 1 mw/cm 2 , = 950 nm tk vo - 2.6 mv/k short circuit current e e = 1 mw/cm 2 , = 950 nm i k 50 a temperature coefficient of i k e e = 1 mw/cm 2 , = 950 nm tk ik 0.1 %/k reverse light current e e = 1 mw/cm 2 , = 400 nm, v r = 5 v i ra 18 a e v = 100 lx, cie illuminant a, v r = 5 v i ra 8.5 a e e = 1 mw/cm 2 , = 950 nm, v r = 5 v i ra 60 a temperature coefficient of i ra cie illuminant a tk ira 0.15 %/k = 950 nm tk ira 0.1 %/k angle of half sensitivity ? 65 deg wavelength of peak sensitivity p 940 nm range of spectral bandwidth 0.1 350 to 1100 nm noise equivalent power v r = 10 v, = 400 nm nep 1.1 x 10 -13 w/ hz rise time v r = 5 v, r l = 50 , = 850 nm t r 40 ns fall time v r = 5 v, r l = 50 , = 850 nm t f 40 ns 20 40 60 8 0 1 10 100 1000 100 94 8 403 v r = 10 v t am b - am b ient temperat u re (c) i ro - re v erse dark c u rrent (na) 0.6 0. 8 1.0 1.2 1.4 94 8 409 v r =5 v = 950 nm 100 8 0 60 40 20 0 i - relati v e re v erse light c u rrent t - am b ient temperat u re (c) am b ra rel
document number: 81643 for technical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.2, 12-may-09 3 TEMD5080X01 silicon pin photodiode vishay semiconductors fig. 3 - reverse light current vs. irradiance fig. 4 - diode capacitance vs. reverse voltage fig. 5 - relative spectral sensitivity vs. wavelength fig. 6 - relative radiant sens itivity vs. angular displacement 110100 0.1 1 10 100 i - photo c u rrent ( a) ra e v - ill u minance (lx) 1000 2053 8 v r = 5 v cie ill u minant a 0 20 40 60 8 0 20539 c d - diode capacitance (pf) v r - re v erse v oltage ( v ) 0.1 100 110 10 30 50 70 90 100 e = 0 f = 1 mhz 400 600 8 00 1000 0 0.2 0.4 0.6 0. 8 1.0 20540 - w a v elength (nm) s ( ) rel - relati v e spectral responsi v ity 500 700 900 1100 0.4 0.2 0 s rel - relati v e radiant sensiti v ity 94 8 406 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 ? - ang u lar displacement
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81643 4 rev. 1.2, 12-may-09 TEMD5080X01 vishay semiconductors silicon pin photodiode package dimensions in millimeters dra w ing- n o.: 6.541-5060.01-4 iss u e: 3; 05.02.0 8 20536 n ot indicated tolerances 0.1
document number: 81643 for technical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.2, 12-may-09 5 TEMD5080X01 silicon pin photodiode vishay semiconductors taping dimensions in millimeters reel dimensions in millimeters 20537 20 8 74
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81643 6 rev. 1.2, 12-may-09 TEMD5080X01 vishay semiconductors silicon pin photodiode solder profile fig. 7 - lead (pb)-free reflow solder profile acc. j-std-020d drypack devices are packed in moisture barrier bags (mbb) to prevent the products from moisture absorption during transportation and storage. ea ch bag contains a desiccant. floor life time between soldering and removing from mbb must not exceed the time indicated in j-std-020: moisture sensitivity: level 4 floor life: 72 h conditions: t amb < 30 c, rh < 60 % drying in case of moisture absorpt ion devices should be baked before soldering. conditions see j-std-020 or recommended conditions: 192 h at 40 c (+ 5 c), rh < 5 % or 96 h at 60 c (+ 5 c), rh < 5 %. 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperat u re (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp u p 3 c/s max. ramp do w n 6 c/s 19 8 41 255 c
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